yixing haiyu refractory co.,ltd
Only imperfect products，No picky customers.
Add to Cart
silicon nitride ceramics basic chip integrated electronic circuit military technology electric automobile
product name:Silicon nitride ceramic basic chip
product description:
Silicon nitride ceramic substrate is a ceramic substrate with silicon nitride ( SI3N4 ) as the main crystal phase, also known as silicon nitride ceramic substrate. The molecular formula of silicon nitride is SI3N4, the relative molecular mass is 140.28, the hexagonal crystal system, and the crystal is hexahedron. Silicon nitride ceramic is a kind of high temperature heat-resistant material. Its thermal conductivity is more than 5 times higher than that of alumina ceramic, and its expansion coefficient is low, which is consistent with the performance of silicon. The substrate made of silicon nitride ceramics as the main raw material has excellent characteristics such as high thermal conductivity, low expansion coefficient, high strength, corrosion resistance, excellent electrical properties, and good light transmission. It is an ideal heat dissipation substrate and packaging material for large-scale integrated circuits. At the same time, silicon nitride also has excellent mechanical properties and machinability, high temperature resistant ceramics, corrosion resistant ceramics, wear-resistant ceramics, diamagnetic ceramics, insulating ceramics and self-lubricating ceramics.
product index:
| characteristic | specification | detecting instrument | |
|
material properties |
Microscopic density | ≥3.22g/cm3 | GB/T1033 |
| bending strength | ＞600MPa | ASTM C1161-2013 | |
| young's modulus | ＞310GPa | ASTM C1259-2014 | |
| vickers hardness | ＞15GPa | ASTM C1327-2015 | |
| fracture toughness | 6.5MPa/√m | ASTM C1421 | |
| thermal conductivity | ＞60W/m.k | 25℃,ASTM D5470 | |
|
thermal expansion coefficient
|
2.6*10-6/k | 40-400℃,ASTM D696 | |
| 2.6*10-6/k | 40-800℃,ASTM 696 | ||
|
electrical properties |
dielectric constant | 7.8 | 1MHz,ASTM D2419 |
| dielectric loss | 4*10-4 | 1MHz,ASTM D2419 | |
| volume resistivity | ＞1014Ω | 25℃,ASTM D2739 | |
| breakdown voltage | ＞15KV/mm | ASTM D149 |